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Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs |
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| Authors: | W Van Den Daele C Le Royer E Augendre J Mitard G Ghibaudo S Cristoloveanu |
| Affiliation: | a IMEP-LAHC Grenoble-INP Minatec, BP257, 38016 Grenoble cedex 1, France;b CEA-Leti, Minatec, F38054, Grenoble cedex 9, France;c IMEC, Kapeldreef 75, B-3001 Leuven, Belgium |
| Abstract: | |
| Keywords: | Germanium Germanium-on-Insulator GeOI SOI pMOSFET Low temperature measurements Effective electric field Scattering mechanisms High-κ metal gate Surface roughness mobility Coulomb mobility |
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