| 碳多孔体中碳化硅晶须的原位生长 |
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| 引用本文： | 陈康华 肖泽强. 碳多孔体中碳化硅晶须的原位生长[J]. 无机材料学报, 1994, 9(4): 417-422 |
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| 作者姓名： | 陈康华 肖泽强 |
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| 作者单位： | Northeastern University，P. O. Box 312 Shenyang 110006 China |
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| 摘 要： | 根据碳化硅晶须生长的特定驱动力要求，通过实验和建立气相传输模型研究了碳多孔体中碳化硅晶须原位生长的条件。模型和实验研究均表明，温度和多孔体表面气相组成对多孔体内的晶须原位生长起决定作用；体内附加反应的设置可以改变晶须生长所要求的温度和表面气相条件。
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| 关 键 词： | 碳多孔体 碳化硅 晶体生长 晶须 固态反应 |
In-Situ Growth of SiC Whiskers in Porous Carbon Bulk |
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| Chen Kanghua,Xiao Zeqiang. In-Situ Growth of SiC Whiskers in Porous Carbon Bulk[J]. Journal of Inorganic Materials, 1994, 9(4): 417-422 |
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| Authors: | Chen Kanghua Xiao Zeqiang |
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| Abstract: | According to the specific driving force for the growth of SiC whiskers, the process parameters for insitu growth of SiC whiskers in porous carbon bulk were determined by experiment and gas-transfer model.Both experiment and model show that the in-situ whisker growth is greatly dependent on temperature and gas composition at the surface of porous carbon bulk, and with additional reaction in the porous carbon bulk, the process parameters should be changed for the in-situ whisker growth. |
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| Keywords: | carbon matrix composite silicon carbide crystal growth whisker solid state reaction |
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