Resistive Memory Switching of $hbox{Cu}_{x}hbox{O}$ Films for a Nonvolatile Memory Application |
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| Authors: | Lv H.B. Yin M. Fu X.F. Song Y.L. Tang L. Zhou P. Zhao C.H. Tang T.A. Chen B.A. Lin Y.Y. |
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| Affiliation: | Fudan Univ., Shanghai; |
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| Abstract: | Poly crystalline CuxO films produced by plasma oxidation are investigated for nonvolatile memory applications. Reversible bistable resistive switching from a high-resistance state to a low-resistance state, and vice versa, is observed in an integrated Al/CuxO/Cu structure under voltage sweeping. More than 3000 repetitive cycles are observed in 180-mum memory devices with an on/off ratio of ten times. Data testing shows that the devices meet the ten-year retention requirement for the storage of programmed logic signals. |
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