Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films |
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| Affiliation: | 1. Harbin Institute of Technology, Harbin 150080, PR China;2. North China Electric Power University, Beijing 102206, PR China;1. Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150001, China;2. Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, China;3. Center of Analysis Measurement, Harbin Institute of Technology, Harbin 150001, China;4. Beijing Institute of Aeronautical Materials, Beijing, China;1. School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, PR China;2. School of the Environment, Jiangsu University, Zhenjiang 212013, PR China;3. State Key Laboratory of Coordination Chemistry, Nanjing University, Nanjing 210093, PR China;4. Maple Leaf International High School, Zhenjiang 212013, PR China;1. School of Material Science and Technology Jiangsu University, Zhenjiang, China;2. Automobile Engineering Research Institute Jiangsu University, Zhenjiang, China;1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India;2. Department of Physics, Osmania University, Hyderabad 500007, India;1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;2. MOE Key Laboratory of Micro-systems and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China;3. School of Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ～65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ～10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10?3 Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices. |
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| Keywords: | A Oxides A Thin films B Optical properties B Sputtering D Electrical properties |
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