Photoelectric properties of structures based on TlInS2 single crystals |
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| Authors: | S Iida N Mamedov V Yu Rud’ Yu V Rud’ |
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| Affiliation: | (1) Nagaoka University of Technology, Nagaoka, Niigata 940-21, Japan;(2) St. Petersburg State Technical University, 195251 St. Petersburg, Russia;(3) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | The photovoltaic effect in heterocontacts of various types, viz., In/TlInS2, InSe/TlInS2, and GaSe/TlInS2, is investigated. The relative photoconversion quantum efficiency of these structures is studied as a function of the energy
of the incident photons and the polarization plane of linearly polarized light. It follows from photosensitivity measurements
that the photosensitive structures obtained can be employed as broad-band and selective photosensors of optical radiation.
Fiz. Tekh. Poluprovodn. 32, 78–81 (January 1998) |
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