|
|||||
|
|
Photoluminescence spectra of MnIn2S4 |
|
| Authors: | M. Guk C. MerschjannI. Bodnar T. TyborskiT. Schedel-Niedrig M. Lux-SteinerE. Arushanov |
| Affiliation: | a Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, MD 2028, Moldova b Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany c Department of Chemistry, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus |
| Abstract: | MnIn2S4 single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependencies of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor-acceptor pair recombination. The analysis of the temperature quenching of the PL intensity yields one defect donor level with a thermal ionization energy of about 0.17 eV. The broad band of PL spectra indicates that radiative recombination is related to multiphonon optical processes. The energy of the involved phonon was found to be around 0.025 eV and the energy of the acceptor level is about 0.86 eV. |
| Keywords: | MnIn2S4 Single crystal Directional crystallization Photoluminescence Defect levels |
| 本文献已被 ScienceDirect 等数据库收录！ | |