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Structural and electrical properties of Gd(Ni1/2Zr1/2)O3
Authors:Nishant KumarAlo Dutta  S PrasadTP Sinha
Affiliation:a Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India
b Department of Physics, T.M. Bhagalpur University, Bhagalpur 812007, India
Abstract:The Gd(Ni1/2Zr1/2)O3 (GNZ) ceramic is synthesized by the solid-state reaction technique. The X-ray diffraction pattern of the sample shows monoclinic phase at room temperature. The dielectric dispersion of the material is investigated in the temperature range from 303 K to 673 K and in the frequency range from 100 Hz to 1 MHz. The relaxation peak is observed in the frequency dependence of the loss tangent. The relaxation time at different temperatures is found to obey Arrhenius law having activation energy of 1.1 eV which indicates the hopping of ions at the lattice site and may be responsible for the dielectric relaxation of GNZ. The scaling behaviour of loss tangent suggests that the relaxation mechanism is temperature independent. The frequency dependent conductivity spectra follow the power law. In the impedance formalism, the Cole-Cole model is used to study the relaxation mechanism of GNZ.
Keywords:Gd(Ni1/2Zr1/2)O3  Impedance spectroscopy  Dielectric relaxation
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