Resistive switching characteristics of polyimides derived from 2,2′‐aryl substituents tetracarboxylic dianhydrides |
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| Authors: | Yueqin Li Huihua Xu Xian Tao Kejia Qian Shuang Fu Shijin Ding Yingzhong Shen |
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| Affiliation: | 1. Applied Chemistry Department, School of Material Science Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, PR China;2. State Key Laboratory of ASIC System, School of Microelectronics, Fudan University, Shanghai 200433, PR China |
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| Abstract: | 2,2′‐Position aryl‐substituted tetracarboxylic dianhydrides including 2,2′‐bis(biphenyl)‐4,4′,5,5′‐biphenyl tetracarboxylic dianhydride and 2,2′‐bis[4‐(naphthalen‐1‐yl)phenyl)]‐4,4′,5,5′‐biphenyl tetracarboxylic dianhydride were synthesized. A new series of aromatic polyimides (PIs) were synthesized via a two‐step procedure from 3,3′,4,4′‐biphenyl tetracarboxylic dianhydride and the newly synthesized tetracarboxylic dianhydrides monomers reacting with 2,2′‐bis[4′‐(3″,4″,5″‐trifluorophenyl)phenyl]‐4,4′‐biphenyl diamine. The resulting polymers exhibited excellent organosolubility and thermal properties associated with Tg at 264 °C and high initial thermal decomposition temperatures (T5%) exceeding 500 °C in argon. Moreover, the fabricated sandwich structured memory devices of Al/PI‐a/ITO was determined to present a flash‐type memory behaviour, while Al/PI‐b/ITO and Al/PI‐c/ITO exhibited write‐once read‐many‐times memory capability with different threshold voltages. In addition, Al/polymer/ITO devices showed high stability under a constant stress or continuous read pulse voltage of ? 1.0 V. Copyright © 2011 Society of Chemical Industry |
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| Keywords: | polyimide fluoropolymers memory capability synthesis thermal properties |
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