Bias‐dependent small‐signal modeling based on neuro‐space mapping for MOSFET |
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| Authors: | Shoulin Li Jiali Cheng Bo Han Jianjun Gao |
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| Affiliation: | 1. School of Information Science and Technology, East China Normal University, Shanghai 200241, People's Republic of China;2. Department of Electronic Engineering, Huaihai Institute of Technology, Lianyungang, Jiangsu, People's Republic of China;3. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, People's Republic of China |
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| Abstract: | In this article, bias‐dependent small‐signal modeling approach based on neuro‐space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz–40 GHz confirming the validity and effectiveness of our approach. In addition, higher accuracy is achieved by our approach in contrast to conventional empirical model. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011. |
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| Keywords: | neural network space mapping MOSFET small‐signal modeling parameter extraction |
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