| 8毫米功率HBT研究 |
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| 引用本文： | 焦智贤,蔡克理,曾庆明,王全树,潘静. 8毫米功率HBT研究[J]. 微纳电子技术, 1996, 0(4) |
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| 作者姓名： | 焦智贤 蔡克理 曾庆明 王全树 潘静 |
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| 作者单位： | 电子部第１３研究所 |
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| 摘 要： | 简要介绍了异质结双极晶体管（ＨＢＴ）的发展现状。对ＨＢＴ器件性能进行了理论分析、设计并制作了功率ＨＢＴ器件样品。器件性能达到：ｆ＿Ｔ＝４０ＧＨｚ，ｆ＿（ｍａｘ）＝３２ＧＨｚ，在８ＧＨｚ工作频率下测量，输出功率为１００ｍＷ，功率附加效率为３１．３％，增益为９．４ｄＢ；ｆｏ＝１２ＧＨｚ，输出功率为２３．６ｍＷ，增益６．１ｄＢ，功率附加效率为２３．４％。
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| 关 键 词： | 异质结双极晶体管，微波功率 |
Investigation of Power HBT in 8mm Band |
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| Jiao Zhixian, Cai Keli, Zeng Qingming, Wang Quanshu, Pan Jing. Investigation of Power HBT in 8mm Band[J]. Micronanoelectronic Technology, 1996, 0(4) |
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| Authors: | Jiao Zhixian Cai Keli Zeng Qingming Wang Quanshu Pan Jing |
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| Abstract: | In this paper the status of HBT technology development is briefly reviewed. The microwave Performance of AlGaAs/GaAs HBT is described theoritically. Then the design and fabrication of the power HBT were given. The f_T and f_(max) are about 40GHz and 32GHz respectively. At 8GHz, 9.4dB associated gain was achieved with 31.3% power added efficiency. The output power is 100mW. At 12GHz,the output power is 23,6mW while the associated gain is 6.1dB.The power added efficiency is 23.4%. |
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| Keywords: | HBT Microwave power |
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