| 液封合成与切氏法生长InP单晶 |
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| 引用本文： | 彭正夫,徐稼迟,吴尚珍,汪善孝. 液封合成与切氏法生长InP单晶[J]. 固体电子学研究与进展, 1982, 0(2) |
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| 作者姓名： | 彭正夫 徐稼迟 吴尚珍 汪善孝 |
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| 摘 要： | ——本文介绍一种制备InP单晶的新工艺.工艺特点是实验周期短和沾污少.晶体电学参数已达到N_D-N_A=4.53×10~(15)cm~(-3)和μ_(77K)=29920cm~2/V·s.(111)In面的位错密度为10~3～10~4cm~(-2).单晶锭重约200克.在掺Sn-InP衬底上汽相外延生长的InP层用于制做体效应器件,在58.3GHz下有120mW的输出功率和2.08%的效率.
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Liquid Encapsulated Compounding and Czochralski Growth of lnP |
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| Abstract: | A new technique for preparing InP single crystals is described. The best results areobtained: ND-NA = 4.53×1015cm-8, μ77K = 29920cm2/V·s, and the dislocation density of (111)In≌103-104cm-2. The weight of InP single crystal is about 200g. The epi-layers grown on Sn-doped InP substrates by VPE have been used as active layers to fabricate Gunn devices exhibiting 120mW output power and 2.08% efficiency measured at 58.3 GHz. |
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