扩展电阻技术及其应用

本文详细地介绍了包括实验装置、测量程序和数据分析在内的扩展电阻技术.基于这种技术制成了自动两探针扩展电阻测试设备,在离子注入硅片表面得到的测量重复性介于1～3%,在单晶样品上电阻率的测量误差不大于15%.借助扩展电阻技术得到的掺杂分布能与C—V法结合阳极氧化剥层技术得到的分布相一致.基于单层突变结理论,使用计算机计算了修正因子.最后,详细阐述了扩展电阻技术的应用.

Spreading Resistance Technique and Its Applications

In this paper, spreading resistance technique including experimental apparatus, measuring procedure and data analysis is presented in detail. An automatic spreading resistance testing set with two-point probe configuration was built up. The measuring reproducibility obtained on the surface of ion-implantated silicon wafer is in the range of 1-3 %, and the error in measuring resistivity of the monoerystal specimen is less than 15%. The doping profiles achieved by means of spreading resistance technique are in good agreement with that of C-V method combined with the anode oxidation stripping technique. The correction factors based on the unilayer step-junction theory are calculated using an electrical computer. Last, the applications of spreading resistance technique are expounded.