| MOCVD生长GaAs/AlGaAs量子阱研究 |
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| 引用本文： | 任红文,黄柏标.MOCVD生长GaAs/AlGaAs量子阱研究[J].固体电子学研究与进展,1992,12(1):4-7. |
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| 作者姓名： | 任红文 黄柏标 |
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| 作者单位： | 山东大学晶体材料研究所，山东大学晶体材料研究所，山东大学晶体材料研究所，山东大学晶体材料研究所，山东大学晶体材料研究所，山东大学晶体材料研究所 济南 250100，济南 250100，济南 250100，济南 250100，济南 250100，济南 250100 |
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| 摘 要： | 利用常压MOCVD技术在较低生长速率下生长出多种GaAs/AlGaAs多量子阱结构材料,利用低温PL谱和TEM对材料结构进行了表征。所得势阱和势垒结构厚度均匀平整,最窄阱宽为1.8nm。本研究表明,低速率(γ≤0.5nm/s)连续生长工艺能够避免杂质在界面富集,优于间断生长工艺,且在掺si n~+-GaAs衬底上所得量子阱发光强度高于掺Cr SI-GaAs衬底上的结果。
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| 关 键 词： | 生长 量子阱 MOCVD GaAs/AlGaAs |
MOCVD Growth of GaAs/AlGaAs Multi-Quantum Wells |
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| Ren Hongwen,Huang Baibiao,Liu Shiwen Liu Liqiang,Xu Xiangang,Jiang Minhua.MOCVD Growth of GaAs/AlGaAs Multi-Quantum Wells[J].Research & Progress of Solid State Electronics,1992,12(1):4-7. |
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| Authors: | Ren Hongwen Huang Baibiao Liu Shiwen Liu Liqiang Xu Xiangang Jiang Minhua |
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| Abstract: | Different GaAs/AlGaAs multi-quantum well(MQW) materials were grown by AP-MOCVD under very low growth rates. PL and TEM were used to measure and characterize the structures of the QWs. The measurements indentified very uniform barrier and smooth interfaces and layer thicknesses,and the thinnest well obtained was 1. 8nm. The study showed that the continuous growth method and low growth rates (r≤0.5nm/s) can overcome the shortcomings of impurity collection at the interfaces during the interupted growth period and interface roughness. And obtained PL intensities of QWs grown on Si-doped GaAs substrates were higher than that on Cr-doped GaAs substrates. |
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| Keywords: | Growth Quantum Well MOCVD GaAs/AlGaAs |
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