| Epitaxy and Growth Mechanism of Gallium Antimonide by MOCVD |
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| 引用本文： | 韦光宇,彭瑞伍,任尧成,丁永庆. Epitaxy and Growth Mechanism of Gallium Antimonide by MOCVD[J]. 稀有金属(英文版), 1993, 0(3) |
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| 作者姓名： | 韦光宇 彭瑞伍 任尧成 丁永庆 |
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| 作者单位： | Shanghai Institute of Metallurgy Chinese Academy of Sciences，Shanghai 200050，P.R.China，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，P.R.China，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，P.R.China，Shanghai Institute of Metallurgy，Chinese Academy of Sciences，Shanghai 200050，P.R.China |
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| 摘 要： | GaSb epilayers were grown on GaAs and/or GaSb substrates by MOCVD respectively.The influenceof growth conditions on the properties of the epilayers was studied in order to improve the growth pro-cesses.The growth mechanism of MOCVD GaSb was investigated.An equation derived for chemical reac-tion controlled growth rate of MOCVD GaSb was verified by the experiments.The typical FWHM of doub-le crystal X-ray diffraction(DCXD)spectra of GaSb epilayers on GaSb and/or GaAs substrates are 20arcsec and 150 arcsec,respectively.The 300 K hole concentration of p=1.2×10~(16)cm~(-3) with Hall mobilityof 898 cm~2/V·s is obtained.
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Epitaxy and Growth Mechanism of Gallium Antimonide by MOCVD |
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| Wei Guangyu Peng Ruiwu Ren Yaocheng Ding Yongqing. Epitaxy and Growth Mechanism of Gallium Antimonide by MOCVD[J]. Rare Metals, 1993, 0(3) |
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| Authors: | Wei Guangyu Peng Ruiwu Ren Yaocheng Ding Yongqing |
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| Affiliation: | Wei Guangyu Peng Ruiwu Ren Yaocheng Ding Yongqing Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050,P.R.China |
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| Abstract: | |
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| Keywords: | MOCVD GaSb Surface morphology Growth rate |
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