A limiting amplifier with low phase deviation using an AlGaAs/GaAsHBT |
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| Authors: | Nakamura M. Imai Y. Sano E. Yamauchi Y. Nakajima O. |
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| Affiliation: | NTT LSI Lab., Kanagawa; |
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| Abstract: | The design and performance of an AlGaAs/GaAs HBT limiting amplifier are presented. It is revealed that the main cause of phase shift deviation in a limiting amplifier is the bias dependence of the input capacitance, which is the dominant nonlinear factor in a transistor. A circuit design featuring a differential configuration with an emitter peaking technique lowers phase deviation and widens the frequency band. The device achieves high-frequency operation of 15 GHz with a low phase shift deviation of 3° over a 15-dB input dynamic range |
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