Role of Cu film texture in grain growth correlated with twin boundary formation

To understand the role of Cu film texture in grain growth at room temperature (RT) in relation to twin boundary formation Cu films were deposited on various barrier materials and the Cu film texture was investigated by X-ray diffraction. Cu grain growth was rapid on a barrierless SiO₂/Si substrate and very slow on a Ta barrier due to strong (1 1 1) texture. The growth rate and the average grain diameter after being kept at RT for up to ∼60 days were maximum at a (2 0 0)_Cu peak to (2 2 2)_Cu peak area ratio of ∼1.0, where {1 1 1}, {1 0 0} and {5 1 1} grains coexisted. Such coexistence of three or more orientations of grains is essential in facilitating Cu grain growth at RT. Similarly, the average twin boundary (TB) density was maximum when Cu grain growth was facilitated. TB formation in nano-sized Cu grains was not controlled by grain size, but due to grain growth. The TB could be annealing twins caused by irregularities in the stacking sequence during relatively fast grain growth. The Cu film texture is concluded to be determined at the beginning of deposition, and the wettability of various barrier materials by the Cu films plays a key role in determining the film texture.