Design of an epi-thermal neutron flux intensity monitor with GaN wafer for boron neutron capture therapy |
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| Authors: | Xingcai Guan Masanobu Manabe Isao Murata Tieshan Wang |
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| Affiliation: | 1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou, Gansu Province 730000, P.R. China;2. Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japanguanxc09@lzu.edu.cn;4. Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan |
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| Abstract: | Boron neutron capture therapy (BNCT) is a promising cancer therapy. Epi-thermal neutron (0.5 eV < En < 10 keV) flux intensity is one of the basic characteristics for modern BNCT. In this work, based on the 71Ga(n,γ)72Ga reaction, a new simple monitor with gallium nitride (GaN) wafer as activation material was designed by Monte Carlo simulations to precisely measure the absolute integral flux intensity of epi-thermal neutrons especially for practical BNCT. In the monitor, a GaN wafer was positioned in the center of a polyethylene sphere as neutron moderator covered with cadmium (Cd) layer as thermal neutron absorber outside. The simulation results and related analysis indicated that the epi-thermal neutron flux intensity could be precisely measured by the presently designed monitor. |
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| Keywords: | BNCT epi-thermal neutron flux intensity monitor GaN wafer activation method Monte Carlo simulation |
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