Quantitative oxygen measurements in OMVPE Al
x
Ga1?x
As grown by methyl precursors |
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| Authors: | T F Kuech R Potemski F Cardone G Scilla |
| |
| Affiliation: | (1) Department of Chemical Engineering, University of Wisconsin, 53706 Madison, WI;(2) IBM T. J. Watson Research Center, 10598 Yorktown Heights, NY |
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| Abstract: | Oxygen has always been considered to be a major contaminant in the organo-metallic vapor phase epitaxy (OMVPE) of Al
x
Ga1−x
As. Oxygen incorporation has been invoked as a contributor to low luminescence efficiency, dopant compensation and degradation
of surface morphology among other deleterious effects. This study presents quantitative measurements of oxygen concentration
in nominally high purity Al
x
Ga1−x
As. The oxygen concentration was measured as a function of alloy composition, growth temperature, andV/III ratio. Quantitative secondary ion mass spectroscopy (SIMS) measurements were used to determine the oxygen content as well
as the carbon concentration in the film. The oxygen concentration increases with decreased growth temperature and V/III ratio
while increasing superlinearly with Al content in the epitaxial layer. |
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| Keywords: | OMVPE (AlGa)As doping oxygen incorporation deep levels |
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