High resolution studies on Hoechst AZ PN114 chemically amplified resist

This paper describes the high resolution properties of the negative electron beam resist AZ PN114 showing that it is capable of resolving linewidths of 30 nm and gratings of 100 nm period. Edge noise was measured for critical dimensions (CDs) varying from 50 nm to 200 nm and it was found that using a 100 kV beam voltage 100 nm equal lines and spaces could be written with a 3σ linewidth variation of 7 nm. This increased as the beam voltage was reduced suggesting that edge roughness is shot noise limited.