Microstructure and Nonlinear Properties of Microwave-Sintered ZnO-V2O5 Varistors: I, Effect of V2O5 Doping

The modification of the densification behavior and the grain-growth characteristics of the microwave-sintered ZnO materials, caused by the incorporation of V₂O₅ additives, have been systematically studied. Generally, the addition of V₂O₅ markedly enhances the densification rate, such that a density as high as 97.9% of the theoretical density and a grain size as large as 10 µm can be attained for a sintering temperature as low as 800°C and a soaking time as short as 10 min. Increasing the sintering temperature or soaking time does not significantly change the sintered density of the ZnO-V₂O₅ materials but it does monotonously increase their grain size. Varying the proportion of V₂O₅ in the range of 0.2-1.0 mol% does not pronouncedly modify such behavior. The leakage current density ( J _L) of these high-density and uniform-granular-structure samples is still large, which is amended by the incorporation of 0.3 mol% of Mn₃O₄ in the ZnO materials, in addition to 0.5 mol% of the V₂O₅ additives. Samples that are obtained using such a method possess good nonohmic characteristics (α= 23.5) and a low leakage current density ( J _L= 2.4 10^-6 A/cm²).