| 压焊方式对肖特基器件通态压降的影响 |
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| 引用本文： | 叶俊龙,梁建锋,张少云,简亚平.压焊方式对肖特基器件通态压降的影响[J].电力电子技术,2004,38(5):89-91. |
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| 作者姓名： | 叶俊龙 梁建锋 张少云 简亚平 |
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| 作者单位： | 西安交通大学,陕西,西安,710049 |
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| 摘 要： | 在半导体器件的后部封装工艺中,不同的压焊方式会导致不同的铝丝和肖特基结接触面积,从而导致不同的接触电阻,最终影响肖特基器件的通态压降。根据肖特基器件的电流鄄电压关系式,用MATLAB曲线拟合的方式求出了不同压焊方式下的接触电阻。通过实验选取合理的压焊方式,可极大地提高器件的合格率。
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| 关 键 词： | 半导体元器件 接触电阻/压焊方式 通态压降 曲线拟合 |
| 文章编号： | 1000-100X(2004)05-0089-03 |
| 修稿时间： | 2004年3月2日 |
Influence of Wirebonding to the Forward Voltage Drop of Schottky Device |
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| YE Jun-long,LIANG Jian-feng,ZHANG Shao-yun,JIAN Ya-ping.Influence of Wirebonding to the Forward Voltage Drop of Schottky Device[J].Power Electronics,2004,38(5):89-91. |
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| Authors: | YE Jun-long LIANG Jian-feng ZHANG Shao-yun JIAN Ya-ping |
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| Abstract: | In the retral encapsulation process of semiconductor device, the different wirebonding results in different contact area between the Al and Schottky junction, and then induces different contact resistance, ultimately influences the forward voltage drop of Schottky device. According to the formula of V-I of Schottky device, we get the different contact resistance by means of curve fitting based on MATLAB. The reasonable wirebonding has been chosen through experiment in order to enhance the yield of the 80CPQ020 Schottky rectifier module. |
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| Keywords: | semiconductor device contact resistance/wirebonding on-state voltage drop curve fitting |
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