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磁控溅射技术制备硅纳米晶多层膜及微观结构表征
引用本文:赵志明,马二云,张晓静,田亚萍,屈直,丁宇,曹智睿,白力静,张国君,蒋百灵. 磁控溅射技术制备硅纳米晶多层膜及微观结构表征[J]. 功能材料, 2012, 43(6): 732-735
作者姓名:赵志明  马二云  张晓静  田亚萍  屈直  丁宇  曹智睿  白力静  张国君  蒋百灵
作者单位:西安理工大学材料科学与工程学院,陕西西安,710048
基金项目:陕西省自然科学基金资助项目
摘    要:在室温下,分别利用常规磁控溅射和反应磁控溅射技术交替沉积Si薄膜和Si1-xNx薄膜在单晶硅基体上制备了Si/Si1-xNx纳米多层膜。接下来,在高温下对Si/Si1-xNx多层膜进行退火诱发各层中形成硅纳米晶。研究了Si1-xNx层厚度和N2流量沉积对Si/Si1-xNx多层膜中Si量子点形成的影响。TEM检测结果表明,N2流量为2.5mL/min时沉积的多层膜退火后形成了尺寸为20~30nm的等轴Si3N4纳米晶;N2流量为5.0mL/min时沉积的多层膜退火后在Si层和Si1-xNx多层中均形成了硅纳米晶,而在7.5mL/min N2流量下沉积的Si/Si1-xNx多层膜退火后仅在Si层中形成了硅纳米晶。

关 键 词:磁控溅射技术  Si/Si1-xNx多层膜  Si纳米晶  Si3N4纳米晶  TEM

The microstructure of Si nanocrystallines multilayers deposited by magnetron sputtering
ZHAO Zhi-ming,MA Er-yun,ZHANG Xiao-jing,TIAN Ya-ping,QU Zhi,DING Yu, CAO Zhi-rui,BAI Li-jing,ZHANG Guo-jun,JIANG Bai-ling. The microstructure of Si nanocrystallines multilayers deposited by magnetron sputtering[J]. Journal of Functional Materials, 2012, 43(6): 732-735
Authors:ZHAO Zhi-ming  MA Er-yun  ZHANG Xiao-jing  TIAN Ya-ping  QU Zhi  DING Yu   CAO Zhi-rui  BAI Li-jing  ZHANG Guo-jun  JIANG Bai-ling
Affiliation:(Department of Materials Science and Engineering,Xi’an University of Technology,Xi’an 710048,China)
Abstract:Si/Si1-xNx multilayers were grown by alternating deposition of Si layer and Si1-xNx layer using magnetron sputtering and reactive magnetron sputtering under different N2 flows,and the post-deposition annealing of Si/Si1-xNx multilayers is performed.Transmission electron microscopy(TEM) was used to characterize the microstructure of multilayers.The cross-sectional TEM reveales that the formation of Si3N4 nanocrystallines for 2.5mL/min N2 flows and Si nanocrystallines are embedded in Si layers and Si1-xNx layers of multilayers deposited under 5.0mL/min N2 flows and in Si layers of multilayers deposit at 7.5mL/min N2 flows.
Keywords:magnetron sputtering  Si/Si1-xNx multilayers  Si3N4 nanocrystallines  Sinanocrystallines  TEM
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