射频磁控溅射沉积高质量ZnO薄膜的工艺研究

在室温下利用射频磁控溅射法在硅(100)基片上制备ZnO薄膜,利用X射线衍射(XRD)和扫描电子显微镜(SEM)对其结晶性能进行分析。研究了制备条件对薄膜沉积速率的影响。分析了薄膜沉积速率对薄膜结晶状况的影响及源气体中的氧气和氩气的流量比对薄膜结晶状况的影响。研究结果表明,薄膜的生长速率强烈依赖于射频功率和工作气压,薄膜的结晶性能强烈依赖于薄膜的沉积速率和反应气体中氧气和氩气的流量比。制备高结晶质量的ZnO薄膜的最佳工艺参数为靶到衬底的距离为4cm,输入功率为250W,源气体中氩气和氧气的流量比n(Ar)∶n(O2)为5∶20,溅射工作气压为2Pa。在最佳工艺条件下所制备的薄膜表面平整致密,接近单晶,在可见光区的透射率高达90%。

The study on deposition parameters of RF sputtered high-quality ZnO films

Undoped ZnO films were deposited on(100) silicon substrate by radio frequency magnetron sputtering at room temperature.The properties of the films were examed by X-ray diffraction(XRD) and scanning electron microscope(SEM).The effects of deposition parameters on the growth rate of ZnO films have been investigated.The dependence of crystalline of the films on the growth rate and O2/Ar flow rate during the deposition is analysed as well.The results show that the growth rate of the deposited films is mainly determined by RF power and the reactive gas pressure,the crystallinity of ZnO films is mainly determined by the growth rate of the films and O2/Ar flow rate during the deposition.The best deposition parameters of RF sputtered high-quality ZnO films are as follows:the distance between the substrate and the target is 40mm,the sputtering power is 250W,the flow rate ratio of Ar∶O2 is 5∶20,the reactive gases pressure is 2Pa.Films with high transparency of 90%,higy c-axis orientation,continucous and dense morphology have been achieved at the best deposition parameters.