| 静压法合成含硼金刚石结构及电阻特性研究 |
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| 引用本文： | 宫建红,林淑霞,高军. 静压法合成含硼金刚石结构及电阻特性研究[J]. 功能材料, 2012, 43(4): 430-432 |
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| 作者姓名： | 宫建红 林淑霞 高军 |
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| 作者单位： | 山东大学威海分校机电与信息工程学院,山东威海,264209 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 采用在铁基触媒中加入硼铁粉的方法制成Fe-Ni-C-B系触媒,用静压法合成含硼金刚石。研究了含硼金刚石的形貌、晶体结构和电阻-温度曲线。实验结果表明,在不同温度区间内,金刚石具有不同的电离能,分析了其原因。同时测得此含硼金刚石的最高工作温度为773K左右。为高温半导体金刚石的研究提供了实验基础。
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| 关 键 词： | 金刚石 硼 结构 电阻 性能 |
Study on the crystal structure and resistance properties of the boron-doped diamonds synthesized from Fe-Ni-C-B system |
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| GONG Jian-hong,LIN Shu-xia,GAO Jun. Study on the crystal structure and resistance properties of the boron-doped diamonds synthesized from Fe-Ni-C-B system[J]. Journal of Functional Materials, 2012, 43(4): 430-432 |
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| Authors: | GONG Jian-hong LIN Shu-xia GAO Jun |
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| Affiliation: | (School of Mechanical & Electrical Engineering,Shandong University at Weihai,Weihai 264209,China) |
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| Abstract: | In present paper,boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst.The morphology,crystal structure,resistance-temperature characteristic curve were studied.Experiments proved that the boron-doped diamond has different ionization energy at different temperature range and the reason is analyzed.The maximum operating temperature is about 773K for such boron-doped diamond.This study provides an experimental basis for high-temperature semiconductor diamond. |
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| Keywords: | diamond boron crystal structure resistance properties |
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