直流溅射工艺参数对Mo薄膜结构及电性能的影响

采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,对不同溅射功率和溅射工作气压下沉积的薄膜进行X射线衍射、SEM(扫描电子显微镜)、电阻率测试,讨论了工艺参数对沉积Mo薄膜相结构、表面微观形貌、薄膜沉积速率和电学性能的影响。结果表明,随着溅射功率的增加,薄膜的结晶性能变好,沉积速率提高,在沉积功率范围内薄膜均匀致密,表面无空隙,电阻率较低;随着溅射工作气压增加,薄膜结晶性能变差,沉积速率先增加后降低,在沉积工作气压范围内,薄膜致密;随气压降低,电阻率急剧减小。因此,较高的溅射功率和较低的工作气压沉积的Mo薄膜更适合作CIGS薄膜太阳电池的BC层(背接触层)。

Influence of DC sputtering parameter on the structural and electrical properties of Mo thin film

Molydbenum(Mo) thin films were deposited on soda-lime glass substrates using DC magnetron sputtering method.The structure,morphology,and electrical properties of the sputtered Mo films have been examined with respect to the deposition power and working gas pressure.Both increasing sputter power and decreasing work gas pressure result in the deposited Mo films exhibit better crystalline structure,more compact surface and lower resistivity.For the application of using as back ground of Cu(InGa)Se2(CIGS) solar cells,Mo films should be deposited at a higher deposition power and a lower working gas pressure.