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Cu2ZnSnS4薄膜光电性能及其太阳电池的制备和研究
引用本文:江丰,沈鸿烈,金佳乐,王威. Cu2ZnSnS4薄膜光电性能及其太阳电池的制备和研究[J]. 功能材料, 2012, 43(15): 2040-2044
作者姓名:江丰  沈鸿烈  金佳乐  王威
作者单位:1. 南京航空航天大学材料科学与技术学院,江苏南京,210016
2. 南京航空航天大学材料科学与技术学院,江苏南京210016/南京航空航天大学教育部纳智能材料器件重点实验室,江苏南京210016
基金项目:国家自然科学基金资助项目,江苏省高校优势学科建设工程对本项目的大力资助
摘    要:采用硫化Zn/Sn/Cu金属多层膜的方法制备了太阳电池吸收层用的Cu2ZnSnS4(CZTS)薄膜。用X射线衍射仪、拉曼光谱仪、紫外-可见近红外分光光度计、扫描电镜、能谱仪及数字源表等对薄膜进行了一系列的表征。结果表明制备的CZTS薄膜没有杂相存在并具有标准拉曼峰。薄膜在可见光范围内的吸收系数>104cm-1,同时其光学带隙接近1.5eV。CZTS薄膜具有均匀致密的表面形貌,薄膜元素比例非常接近标准化学计量比。此外,CZTS薄膜呈现显著的光电流响应性能,其光电流的激发和衰减时间分别为0.0736和0.2646s。

关 键 词:太阳电池  CZTS  薄膜  光电性能

Fabrication and optoelectronic property of Cu2 ZnSnS4 film and related solar cell
JIANG Feng,SHEN Hong-lie,JIN Jia-le,WANG Wei. Fabrication and optoelectronic property of Cu2 ZnSnS4 film and related solar cell[J]. Journal of Functional Materials, 2012, 43(15): 2040-2044
Authors:JIANG Feng  SHEN Hong-lie  JIN Jia-le  WANG Wei
Affiliation:1(1.College of Material Science and Technology,Nanjing University of Aeronautics & Astronautics,Nanjing 210016,China; 2.Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education,Nanjing University of Aeronautics & Astronautics,Nanjing 210016,China)
Abstract:Cu2ZnSnS4(CZTS) film was prepared by sulfurization of Zn/Sn/Cu multilayer.CZTS film’s characterization was carried out by X-ray diffraction,Raman spectrum,UV-Vis-Nir spectrophotometer,scan electron microscope,energy dispersive spectroscopy and digital source meter.The results show that no any other phases were observed and the Raman peaks observed were in accord with the standard Raman perks of kesterite CZTS.The light absorption coefficient of the film was higher than 104cm-1 and its optical band gap was estimated to be about 1.5eV.The surface of CZTS film was compact and uniform and the element ratio was close to the stoichiometric value.Obvious photo current response property of film was observed,and the photo current excitation time and decay time are 0.0736 and 0.2646s,respectively.
Keywords:solar cell  CZTS  thin film  optoelectronic property
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