| 低电压驱动微流控芯片二氧化硅绝缘薄膜的研究 |
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| 引用本文： | 吕宏峰,闫卫平,李杰超. 低电压驱动微流控芯片二氧化硅绝缘薄膜的研究[J]. 功能材料, 2012, 43(9): 1204-1206,1211 |
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| 作者姓名： | 吕宏峰 闫卫平 李杰超 |
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| 作者单位： | 大连理工大学电子科学与技术学院,辽宁大连,116024 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 采用电子束蒸发法在玻璃基底上制备了二氧化硅薄膜,利用原子力显微镜(AFM)、台阶仪、X射线衍射仪(XRD),分别对不同条件下制备的二氧化硅薄膜的表面形貌、膜厚、结构进行了表征,并采用金属/绝缘膜/金属(MIM)结构对薄膜的I-V电学特性进行了分析。结果表明玻璃基底温度在300℃条件下生长的4μm厚度的二氧化硅薄膜,其表面均匀平整,耐压能力>200V,能够承受500kV/cm以上的场强,满足作为低电压驱动微流控芯片绝缘薄膜的要求,并在样品驱动的应用中得到验证。
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| 关 键 词： | 二氧化硅 绝缘薄膜 低电压驱动 微流控芯片 |
The study of SiO2 insulating film for low voltage-driven microfluidic chip |
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| LV Hong-feng,YAN Wei-ping,LI Jie-chao. The study of SiO2 insulating film for low voltage-driven microfluidic chip[J]. Journal of Functional Materials, 2012, 43(9): 1204-1206,1211 |
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| Authors: | LV Hong-feng YAN Wei-ping LI Jie-chao |
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| Affiliation: | (School of Electronic Science and Technology,Dalian University of Technology,Dalian 116024,China) |
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| Abstract: | The silicon dioxide(SiO2) insulating film was fabricated by electron-beam evaporation technique.Different conditions of preparation for the SiO2 film were studied.Micro-morphology,depth and compositions of SiO2 film was investigated by AFM,step profiler and XRD.The electrical properties of the film were determined by measuring I-V characteristics in a metal-insulator-metal(MIM) structure.The results showed that when the substrate temperature was at 300℃ and the thickness of SiO2 film was 4μm,the surface of the film is smooth and uniform.The breakdown voltage is higher than 200V and breakdown strength is greater than 500kV/cm.It meets the requirements of the insulating film for the low voltage-driven micro-fluidic chip and has been validated through the practical experiment of the sample driven. |
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| Keywords: | SiO2 insulating film low voltage-driven microfluidic chip |
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