温度场和电场调控硅基反铁电厚膜相变电流特性研究

采用溶胶-凝胶技术,在Pt(111)/Ti/SiO2/Si衬底上制备了高(100)取向生长、表面平整且结构致密的(Pb,La)(Zr,Ti)O3反铁电厚膜,研究了温度场和电场对(Pb,La)(Zr,Ti)O3反铁电厚膜电学性能的影响。实验结果表明反铁电厚膜在温度场和电场作用下发生反铁电相、铁电相和顺电相的相互转变,随外加电场增加,反铁电-铁电相变温度逐渐减小,介电常数峰值由2410减小到662,相变电流密度值由2.21×10-7A/cm2增大到8.52×10-7 A/cm2;随外加温度场增加,反铁电-铁电相变电场强度逐渐减小,饱和极化强度由39μC/cm2减小到31μC/cm2,相变电流密度值由2.89×10-5 A/cm2减小到8.8×10-6 A/cm2,温度场和电场可实现对反铁电厚膜相变电流效应的有效调控。

Study on phase transition current characterization dependent on temperature and electric field for antiferroelectric thick films on silicon substrates

(Pb,La)(Zr,Ti)O3 antiferroelectric thick film which had high(100) orientation,smooth surface and dense structure was prepared on Pt(111)/Ti/SiO2/Si substrate by sol-gel technology.The electrical properties of(Pb,La)(Zr,Ti)O3 antiferroelectric thick film under various temperature and DC electric fields were studied.The experimental results show that antiferroelectric thick film happened mutual phase transformation of antiferroelectric,ferroelectric and paraelectric depending on temperature and electric field.The phase transition temperature of antiferroelectric-ferroelectric gradually decreases with the increase of applied electric field.The peak value of dielectric constant decreased from 2410 to 662.The phase transition current density increased from 2.21×10-7 to 8.52×10-7A/cm2.The phase transition electric field of antiferroelectric-ferroelectric gradually decreases with the increase of applied temperature field.The relevant saturation polarization changed from 39 to 31μC/cm2.The phase transition current density decreased from 2.89×10-5 to 8.8×10-6A/cm2.The phase transition current characterization can be effectively adjusted by coupling application of temperature field and DC electric field.