A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology |
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| Authors: | Yi-jan Emery Chen Wei-Min Lance Kuo Zhenrong Jin Jongsoo Lee Tretiakov Y.V. Cressler J.D. Laskar J. Freeman G. |
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| Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan; |
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| Abstract: | An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-/spl mu/m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V. |
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