锑化铟晶体空位缺陷的正电子湮灭研究

锑化铟晶体材料的电学性能是影响最终制备的红外探测器件性能的关键因素。材料内部的杂质以及点缺陷特别是空位缺陷会极大的影响材料的电学性能,有时甚至会导致材料反型。本文利用正电子湮灭谱对锑化铟晶体材料的空位缺陷类型进行了研究,同时还对不同晶体生长拉速、导电类型晶体材料的正电子湮灭寿命进行分析。结果表明其内部主要为VIn型空位缺陷,且在一定拉速范围内,正电子湮灭寿命基本无变化,此外空位缺陷也不是导致N型锑化铟晶体材料导电类型反型的主要原因。

Positron annihilation study of vacancy defects in indium antimonide crystals

The electrical properties of indium antimonide crystal material are a key factor affecting the performance of the final infrared detector.Impurities within the material as well as point defects,especially vacancy defects,can greatly affect the electrical properties of materials,and sometimes even lead to material inversion.In this paper,the vacancy defects in indium antimonide crystal materials are investigated using positron annihilation spectroscopy and the positron annihilation lifetimes of different crystal growth pull rates and conductive types of crystal growth rate are also analyzed.The results show that its internal mainly VIn type vacancy defects and within a certain range of pulling rate,the positron annihilation lifetime basically unchanged,in addition to the vacancy defects are not the main cause of the N type indium antimonide crystal material conductivity type inversion.