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Experimental measurement of the effect of copper through-silicon via diameter on stress buildup using synchrotron-based X-ray source |
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| Authors: | Chukwudi Okoro Lyle E. Levine Ruqing Xu Yaw Obeng |
| Affiliation: | 1. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA 4. Theiss Research, La Jolla, CA, 92037, USA 2. Material Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA 3. Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439-4800, USA |
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