High-performance poly-silicon TFTs incorporating LaAlO/sub 3/ as the gate dielectric |
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| Authors: | Hung BF Chiang KC Huang CC Chin A McAlister SP |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan; |
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| Abstract: | We have integrated a high-/spl kappa/ LaAlO/sub 3/ dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-/spl kappa/ dielectric. |
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