Interfacial coupling in heteroepitaxial vertically aligned nanocomposite thin films: From lateral to vertical control |
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| Affiliation: | 1. Basic Science Department, Faculty of Industrial Education, Helwan University, Cairo 11281, Egypt;2. School of Electrical & Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea;3. Energy Harvest–Storage Research Center and Department of Physics, University of Ulsan, Ulsan 680-749, South Korea;4. Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, NY 13902, USA |
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| Abstract: | Very recently, vertically aligned nanocomposite (VAN) thin films have served as an intriguing platform to obtain significant insights of the fundamental physics and achieve novel functionalities for potential technological applications. In this review article, we have investigated the lattice mismatch and vertical interfacial coupling in representative VAN systems for probing strain engineering in the vertical direction. Systematic studies of ferroelectricity, low field magnetoresistance and magnetoelectric coupling in VAN architectures have been reviewed and compared. The enhancement and tunability of the physical properties are attributed to the effective strain-, phase- and interface- couplings in VAN films. In the end, important and promising research directions in this field are proposed, including understanding the growth mechanisms of VAN structures, and creating more effective couplings for enhanced functionalities and ultimate device applications. |
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| Keywords: | Vertically aligned nanocomposite (VAN) Epitaxy Strain engineering Ferroelectricity Magnetoresistance Magnetoelectric coupling |
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