Gap‐Mode Surface‐Plasmon‐Enhanced Photoluminescence and Photoresponse of MoS2 |
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| Authors: | Zhi‐Qian Wu Jing‐Liang Yang Nallappagar K. Manjunath Yue‐Jiao Zhang Si‐Rui Feng Yang‐Hua Lu Jiang‐Hong Wu Wei‐Wei Zhao Cai‐Yu Qiu Jian‐Feng Li Shi‐Sheng Lin |
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| Affiliation: | 1. College of microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, P. R. China;2. State Key Laboratory of Physical Chemistry of Solid Surfaces and College of Chemistry and Chemical Engineering, College of Physical Science and Technology, Xiamen University, Xiamen, P. R. China;3. Jiangsu Key Laboratory for Design and Fabrication of Micro‐Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, China;4. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, China |
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| Abstract: | 2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical‐to‐electrical conversion efficiency. To overcome this shortcoming, a “gap‐mode” plasmon‐enhanced monolayer MoS2 fluorescent emitter and photodetector is designed by squeezing the light‐field into Ag shell‐isolated nanoparticles–Au film gap, where the confined electromagnetic field can interact with monolayer MoS2. With this gap‐mode plasmon‐enhanced configuration, a 110‐fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon‐enhanced MoS2 fluorescent emitters. In addition, a gap‐mode plasmon‐enhanced monolayer MoS2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W?1 is demonstrated, exceeding previously reported plasmon‐enhanced monolayer MoS2 photodetectors. |
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| Keywords: | Ag SHINs gap‐mode MoS2 photodetector PL |
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