Effective Carrier‐Concentration Tuning of SnO2 Quantum Dot Electron‐Selective Layers for High‐Performance Planar Perovskite Solar Cells |
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| Authors: | Guang Yang Cong Chen Fang Yao Zhiliang Chen Qi Zhang Xiaolu Zheng Junjie Ma Hongwei Lei Pingli Qin Liangbin Xiong Weijun Ke Gang Li Yanfa Yan Guojia Fang |
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| Affiliation: | 1. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, P. R. China;2. Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China;3. Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, OH, USA |
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| Abstract: | The carrier concentration of the electron‐selective layer (ESL) and hole‐selective layer can significantly affect the performance of organic–inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two‐step method, i.e., room‐temperature colloidal synthesis and low‐temperature removal of additive (thiourea), to control the carrier concentration of SnO2 quantum dot (QD) ESLs to achieve high‐performance PSCs is developed. By optimizing the electron density of SnO2 QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH3NH3PbI3 absorber is achieved. The superior uniformity of low‐temperature processed SnO2 QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm2 and 16.97% efficiency flexible device. The results demonstrate the promise of carrier‐concentration‐controlled SnO2 QD ESLs for fabricating stable, efficient, reproducible, large‐scale, and flexible planar PSCs. |
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| Keywords: | carrier concentration flexible large‐scale planar perovskite solar cells SnO2 QD |
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