High‐Performance Single‐Crystalline Perovskite Thin‐Film Photodetector |
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| Authors: | Zhenqian Yang Yuhao Deng Xiaowei Zhang Suo Wang Huazhou Chen Sui Yang Jacob Khurgin Nicholas X. Fang Xiang Zhang Renmin Ma |
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| Affiliation: | 1. State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China;2. Department of Mechanical Engineering, University of California, Berkeley, CA, USA;3. Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA;4. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA |
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| Abstract: | The best performing modern optoelectronic devices rely on single‐crystalline thin‐film (SC‐TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low‐cost solution‐based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light‐emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin‐film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC‐TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain‐bandwidth product, and a 100‐photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness‐optimized SC‐TF with much higher mobility and longer recombination time. The results indicate that high‐performance perovskite devices based on SC‐TF may become competitive in modern optoelectronics. |
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| Keywords: | gain halide perovskite photodetectors single‐crystalline thin films |
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