Misorientation‐Angle‐Dependent Phase Transformation in van der Waals Multilayers via Electron‐Beam Irradiation

Misorientation‐angle dependence on layer thickness is an intriguing feature of van der Waals materials, which causes stark optical gain and electrical transport modulation. However, the influence of misorientation angle on phase transformation is not determined yet. Herein, this phenomenon in a MoS₂ multilayer via in situ electron‐beam irradiation is reported. An AA′‐stacked MoS₂ bilayer undergoes structural transformation from the 2H semiconducting phase to the 1T′ metallic phase, similar to a MoS₂ monolayer, which is confirmed via in situ transmission electron microscopy. Moreover, non‐AA′ stacking, which has no local AA′ stacking order in the Moiré pattern, does not reveal such a phase transformation. While a collective sliding motion of chalcogen atoms easily occurs during the transformation in AA′ stacking, in non‐AA′ stacking it is suppressed by the weak van der Waals strength and by the chalcogen atoms interlocked at different orientations, which disfavor their kinetics by the increased entropy of mixing.