| MBE原位碲化镉钝化的碲镉汞长波光电二极管列阵 |
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| 引用本文： | 叶振华,黄建,尹文婷,胡伟达,冯婧文,陈路,廖亲君,陈洪雷,林春,胡晓宁,丁瑞军,何力.MBE原位碲化镉钝化的碲镉汞长波光电二极管列阵[J].红外与毫米波学报,2011,30(6):495-498. |
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| 作者姓名： | 叶振华 黄建 尹文婷 胡伟达 冯婧文 陈路 廖亲君 陈洪雷 林春 胡晓宁 丁瑞军 何力 |
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| 作者单位： | 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,中国科学院上海技术物理研究所 红外成像材料与器件重点实验室 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目）,中国科学院重大资助项目,中国科学院重点资助项目 |
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| 摘 要： | 采用分子束外延(MBE)技术在表面生长碲化镉(CdTe)介质膜的p型碲镉汞(HgCdTe)材料,并通过离子注入区的光刻、暴露HgCdTe表面的窗口腐蚀、注入阻挡层硫化锌(ZnS)的生长、形成p-n结的B+注入、注入阻挡层的去除、绝缘介质膜ZnS的生长、金属化和铟柱列阵的制备等工艺,得到了原位CdTe钝化的n+-on-p...
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| 关 键 词： | 碲镉汞 分子束外延 原位碲化镉钝化 动态阻抗 |
| 收稿时间： | 2010/8/27 0:00:00 |
| 修稿时间： | 2011/4/11 0:00:00 |
HgCdTe photodiode arrays passivated with CdTe Flim |
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| YE Zhen-Hu,HUANG Jian,YIN Wen-Ting,HU Wei-D,FENG Jing-Wen,CHEN Lu,LIAO Qin-Jun,CHEN Hong-Lei,LIN Chun,HU Xiao-Ning,DING Rui-Jun and HE Li.HgCdTe photodiode arrays passivated with CdTe Flim[J].Journal of Infrared and Millimeter Waves,2011,30(6):495-498. |
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| Authors: | YE Zhen-Hu HUANG Jian YIN Wen-Ting HU Wei-D FENG Jing-Wen CHEN Lu LIAO Qin-Jun CHEN Hong-Lei LIN Chun HU Xiao-Ning DING Rui-Jun and HE Li |
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| Affiliation: | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences and Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences |
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| Abstract: | The results of HgCdTe long-wavelength infrared n -on-p planar photodiode arrays passivated by molecular beam epitaxy (MBE) in-situ grown CdTe film were presented in this paper. By mercury-vacancy p-type annealing, ion-implantation window exposure, ZnS ion-implantation barrier layer deposition, B -implantation, ion-implantation barrier layer removal, ZnS dielectric film deposition, metallization and indium-bump arrays fabrication, HgCdTe long-wavelength infrared n -on-p planar photodiode arrays using in-situ CdTe passivation was achieved from a Hg1-xCdxTe film covered with a layer of MBE in-situ grown CdTe film. Zero bias dynamic resistances of HgCdTe photodiode arrays using in-situ CdTe passivation were improved 1~2 times higher than those of non-in-situ CdTe passivation processed one, and the maximum dynamic resistances near small reverse biases were even increased by a factor of 30~40. Since their current-voltage curves were all measured at 78K, it is obvious that in-situ CdTe passivation was beneficial to suppress dark current of n -on-p planar photodiode by optimizing the interface between the HgCdTe detector and CdTe passivation layer, and then to enhance the performance of long-wavelength infrared photodiode arrays operating at small reverse biases. |
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