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Composition of alumina films grown on Si at low temperature with catalytic CVD |
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| Authors: | Yoh-Ichiro Ogita Tugutomo Kudoh |
| Affiliation: | a Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243-0292, Japan b Thermo Electron K. K. C-2F, 3-9 Moriyacho, Kanagawa-ku, Yokohama, 221-0222, Japan |
| Abstract: | The X-ray photoelectron spectroscopy (XPS) measurements have been used to reveal the compositions of alumina (Al2O3) films formed on Si wafers using tri-methyl aluminium (TMA) and molecular oxygen (O2) with catalytic chemical vapour deposition (Cat-CVD). The atomic ratio (O/Al) for Al2O3 samples formed at substrate temperature of 200-400 °C has been obtained to be 1.4 which is close to stoichiometry. The increase of growth rate at substrate temperatures below 200 °C and above 400 °C can be attributed to formation of aluminum oxides with non-stoichiometry and metallic aluminum incorporated in the films resulting from deficient oxygen. Angle resolved XPS measurements have revealed that the alumina/Si interface with no SiO2 film has been obtained at substrate temperatures below 200 °C. |
| Keywords: | Al2O3 High-k MOS gates High-k materials Catalytic CVD Oxide films Insulator gates |
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