Electrical properties of alumina films grown on Si at low temperature using catalytic CVD |
| |
| Authors: | Yoh-Ichiro Ogita Satoshi Ohsone Fumitaka Sakamoto |
| |
| Affiliation: | a Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243-0292, Japan
b Thermo Electron K. K. C-2F, 3-9 Moriyacho, Kanagawa-ku, Yokohama, 221-0222, Japan |
| |
| Abstract: | The electrical properties of alumina films formed at substrate temperatures as low as 27 °C using tri-methyl aluminum (TMA) and molecular oxygen (O2) by catalytic chemical vapor deposition (Cat-CVD) have been investigated by capacitance-voltage (C-V), current-voltage (I-V) measurements and X-ray photoelectron spectroscopy (XPS). Substrate temperature dependence of dielectric constant and leakage current of the films has been explained on the basis of deficiency in oxygen. Interface trapping density of the order of 109 ev− 1cm− 2 has been obtained. Angle resolved XPS measurements have revealed that the direct bonding of alumina and Si was realized with very small interface trapping density. |
| |
| Keywords: | Dielectric constant XPS Cat-CVD Al2O3 Interface trapping density Leakage current High-k gate |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
