三(二乙胺基)氯化硅烷的合成

随着半导体集成电路技术的发展,器件表面钝化保护膜的重要性日益显著。氮化硅薄膜是半导体集成电路中最具应用前景的表面钝化材料之一,发展低温的热化学气相沉积(CVD)工艺来沉积氮化硅表面钝化膜是集成电路发展的趋势,而开发新的硅源、氮源前驱体是实现低温淀积氮化硅薄膜的有效途径。设计了一种新的低温CVD氮化硅薄膜的有机硅源前驱体——三(二乙胺基)氯化硅烷,以四氯化硅和乙二胺为原料,在氮气气氛下,研究了原料预处理、二乙胺用量、反应温度和反应时间等工艺因素对合成收率的影响。最佳工艺条件下,收率达77.4%,并利用核磁共振、元素分析及红外光谱表征了产物的组成及结构。

Synthesis of Tris (diethylamido) chlorosilane

With the development of the large scale integrated circuit technology, surface passivation films of the microelectric devices are receiving increased attention in the semiconductor industry. Owing to its remarkable properties including high thermal stability, chemical inertness and good dielectric properties, silicon nitride (SiNx) thin film is a good candidate for the final passivation layer in the fabrication of semiconductor devices. Low temperature deposition of SiNx films by thermal CVD method is of considerable interest to future application. The development of new organic precursors, which can be used as silicon and/or nitrogen source in the deposition of SiNx films at low temperature, is gaining increasing attention. With silicon tetrachloride and diethylamine as raw materials, a new organic precursor for silicon source, tris (diethylamido) chlorosilane, was synthesized under N2 atmosphere. The effects of the pretreatment of the raw materials, amount of diethylamine, reaction temperature and time on the yield were studied, and it reached 77.4% at optimum conditions. Additionally, the composition and structure of the products were characterized by FT IR, 1H NMR and elemental analysis.