射频磁控溅射制备p-Bi2Te3热电薄膜的电学性能研究

通过射频磁控溅射并控制溅射时间在玻璃基底上沉积了不同厚度和成分的p型Bi2Te3薄膜.Bi2Te3薄膜主要以(221)晶面平行于基底进行生长,先在基底形成大量微小晶粒,合并长大成典型的纤维状组织结构;退火后薄膜沿平面方向形成片状结构.薄膜的电导率和Seebeck系数受薄膜厚度和成分的影响,退火前受薄膜厚度的影响较大,退火后受薄膜成分和均匀性的影响较大,自掺杂Bi质量分数在5%左右时,薄膜功率因子约为760μW/(K2·m).

Fabrication and Electrical Performance of p-Bi2Te3 Thermoelectric Films by RF Magnetron Sputtering

p-Bi2 Te3 films in vary thickness and ingredient are fabricated on the bases of glass by RF magnetron sputtering.The structure of Bi2 Te3 films is typical fibriform which is consists of micro-grains and united grains and Bi2 Te3 films' (221) crystal face is mainly parallel to the base.Annealing treatment leads to grain growth and forms structure of sheets in-plane.The conductivity and Seebeck coefficient are influenced by the thickness and ingredient of the films.The thickness influences the conductivity and Seebeck coefficient of films of as-grown more,but the ingredient and uniformilty influences the conductivity and Seebeck coefficient of annealed films more.The thermoectric power acquired is 760μW/(K2·m)in annealed Bi2 Te3 films when the self-doped Bi is about 5%.