A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes |
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| Authors: | S K Swain J Pradhan G N Dash S R Pattanaik |
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| Affiliation: | 1. School of Physics Sambalpur University, Sambalpur, Odisha 767019, India;2. College of Engineering Bhubaneswar, Bhubaneswar, Odisha 751024, India;3. National Institute of Science and Technology, Berhampur, Odisha 761008, India |
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| Abstract: | Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode. We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 GHz. The effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage, efficiency, noise measure and power output has been presented here. |
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| Keywords: | IMPATT SiC ionization rate saturation drift velocity millimeter wave |
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