| Si(111)衬底上HVPE GaN厚膜生长 |
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| 引用本文： | 颜怀跃,修向前,华雪梅,刘战辉,周安,张荣,谢自力,韩平,施毅,郑有炓.Si(111)衬底上HVPE GaN厚膜生长[J].功能材料,2011,42(3):509-511,515. |
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| 作者姓名： | 颜怀跃 修向前 华雪梅 刘战辉 周安 张荣 谢自力 韩平 施毅 郑有炓 |
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| 作者单位： | 南京大学物理系江苏省光电信息功能材料重点实验室; |
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| 基金项目： | 国家重点基础研究发展计划(973计划)资助项目(2006CB6049); 国家高技术研究发展计划(863计划)资助项目(2009AA03A198); 国家自然科学基金资助项目(60721063,60820106003,60731160628); 南京大学扬州光电研究院基金资助项目(2008008) |
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| 摘 要： | 在Si(111)衬底上,以MOCVD方法高温外延生长的AIN为缓冲层,使用氮化物气相外延(HVPE)方法外延生长了15Km的c面GaN厚膜.并利用X射线衍射(XRD)、光致发光谱(PL)、拉曼光谱(Raman)等技术研究了GaN厚膜的结构和光学性质.分析结果表明,GaN厚膜具有六方纤锌矿结构,外延层中存在的张应力较小,...
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| 关 键 词： | 氢化物气相外延 HVPE Si GaN |
GaN thick films growth on Si(111)by hydride vapour phase epitaxy |
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| YAN Huai-yue,XIU Xiang-qian,HUA Xue-mei,LIU Zhan-hui,ZHOU An,ZHANG Rong,XIE Zi-ii,HAN Ping,SHI Yi,ZHENG You-dou.GaN thick films growth on Si(111)by hydride vapour phase epitaxy[J].Journal of Functional Materials,2011,42(3):509-511,515. |
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| Authors: | YAN Huai-yue XIU Xiang-qian HUA Xue-mei LIU Zhan-hui ZHOU An ZHANG Rong XIE Zi-ii HAN Ping SHI Yi ZHENG You-dou |
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| Affiliation: | YAN Huai-yue,XIU Xiang-qian,HUA Xue-mei,LIU Zhan-hui,ZHOU An,ZHANG Rong,XIE Zi-li,HAN Ping,SHI Yi,ZHENG You-dou(Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China) |
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| Abstract: | C-plane GaN thick films have been successfully grown on Si(111) substrates with AlN as buffer layers by hydride vapour phase epitaxy(HVPE) system.Raman scattering,X-ray diffraction(XRD),and photoluminescence(PL) measurements are used to analyze the structure and properties of the GaN films.The results indicated that the structure of the film is hexagonal wurtzite,the biaxial stress of film is tensile and the value is 0.17GPa,the band edge emission of the GaN thick film is at 363.7nm and no yellow luminescen... |
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| Keywords: | HVPE Si GaN epitaxy |
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