| 无电金属沉积法硅纳米线阵列的制备研究 |
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| 引用本文： | 吴军,杨文彬,何方方,周元林,董发勤.无电金属沉积法硅纳米线阵列的制备研究[J].功能材料,2011,42(2). |
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| 作者姓名： | 吴军 杨文彬 何方方 周元林 董发勤 |
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| 作者单位： | 四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地;西南科技大学材料科学与工程学院; |
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| 基金项目： | 国家自然科学基金委员会-中国工程物理研究院联合基金资助项目(10876033); 四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地开放基金资助项目(10zxfk31); 西南科技大学核废物与环境安全国防重点学科实验室开放基金资助项目(10zxnk06) |
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| 摘 要： | 采用无电金属沉积法在硅衬底上制备出了大面积规整的硅纳米线阵列,并对其形貌控制的影响因素和形成机理进行了研究。用扫描电子显微镜(SEM)、X射线衍射仪(XRD)对硅纳米线阵列和相应银枝晶的形貌和结构进行了表征。结果表明,硅纳米线阵列的形貌受水热体系中溶液配比、温度和时间的影响,在温度为50℃、HF和AgNO3浓度分别为4.6和0.02mol/L的条件下,容易得到大面积排列规整的硅纳米线阵列,并且硅纳米线的长度为30～50μm,直径为200nm左右。无电金属沉积法为硅纳米线及其阵列的制备提供了一种设备简单、条件温和的制备方法。
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| 关 键 词： | 硅纳米线阵列 银枝晶 无电金属沉积法 制备 |
Preparation of silicon nanowire arrays by electroless metal deposition method |
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| WU Jun,YANG Wen-bin,HE Fang-fang,ZHOU Yuan-lin,DONG Fa-qin.Preparation of silicon nanowire arrays by electroless metal deposition method[J].Journal of Functional Materials,2011,42(2). |
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| Authors: | WU Jun YANG Wen-bin HE Fang-fang ZHOU Yuan-lin DONG Fa-qin |
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| Affiliation: | WU Jun1,2,YANG Wen-bin1,HE Fang-fang2,ZHOU Yuan-lin2,DONG Fa-qin1(1.State Key Laboratory Cultivation Base for Nonmetal Composite and Functional Materials,Sichuan Province,Mianyang 621010,China,2.School of Materials Science and Engineering,Southwest University of Science and Technology,China) |
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| Abstract: | Large-area regular silicon nanowire arrays(SiNWs) were prepared on silicon substrate by electroless metal deposition method under hydrothermal conditions.Mechanism and effects of morphology control of SiNWs were studied.Morphologies and structures of SiNWs and Ag dendritic crystal were characterized by scanning electron microscopy(SEM) and X-ray diffraction(XRD).The results showed that morphology of SiNWs could be influenced by solution ratio,temperature and reacting time of hydrothermal system.Large-area S... |
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| Keywords: | silicon nanowire array Ag dendritic crystal electroless metal deposition method preparation |
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