| 半导体金刚石膜的磁阻效应 |
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| 引用本文： | 廖克俊,王万录,王必本. 半导体金刚石膜的磁阻效应[J]. 微细加工技术, 2000, 0(1): 75-78 |
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| 作者姓名： | 廖克俊 王万录 王必本 |
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| 作者单位： | 重庆大学应用物理系,重庆400044 |
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| 摘 要： | 研究了在硅上Ｐ型异质外延金刚石膜的磁阻效应。实验结果表明金刚石膜有显著的磁阻反应，并与磁阻器件的结构有关。在室温下圆盘形结构的磁阻相对变化在５Ｔ磁场下约为０．８５，而长条形结构只有０．４０。
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| 关 键 词： | 金刚石薄膜 磁阻效应 异质外延 |
| 文章编号： | 1003-8213(2000)01-0015-04 |
| 修稿时间： | 1999-02-23 |
Magnetoresistive effect of semiconducting diamond films |
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| LIAO Ke-Jun,WANG Wan-lu,WANG Bi-ben. Magnetoresistive effect of semiconducting diamond films[J]. Microfabrication Technology, 2000, 0(1): 75-78 |
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| Authors: | LIAO Ke-Jun WANG Wan-lu WANG Bi-ben |
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| Affiliation: | LIAO Ke-Jun,WANG Wan-lu,WANG Bi-ben;(Department of Applied Physice, Chongqing University, Chongqing 400044, China) |
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| Abstract: | The magnetoresistive effect of p-type heteroepitaxial diamond films on Si substrate has been investigated. The experimental results showed that a notable maganetoresistive effet in the films was observed, and closely depended on the geometric form of the devices. The relative changes in the maganetoresistance of the heteroepitaxial diamond films with the disk structure were about 0.85 at room tenperature under magnetic field intensity of 5T, but only 0.40 for rectangle structure at the same conditions. |
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| Keywords: | Diamond films Magnetoresistive effect CVD |
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