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反应溅射条件对WO3薄膜光电性能的影响与探索
引用本文:续颖,杨鑫,刘尚军,姜春萍,康洪,高子辰,陈金伟,王瑞林. 反应溅射条件对WO3薄膜光电性能的影响与探索[J]. 广州化工, 2012, 0(5): 88-91
作者姓名:续颖  杨鑫  刘尚军  姜春萍  康洪  高子辰  陈金伟  王瑞林
作者单位:四川大学材料科学与工程学院
基金项目:科技部863“太阳能水解制氢技术的研究与探索”(No.2006AA05Z102);教育部重大培育项目“α-Fe2O3薄膜光解水制氢特性的研究”(No.707050),教育部博士点基金(20110181110003);成都市科技局攻关计划(Nos.10GGYB380GX-023,10GGYB828GX-023),成都市科技局重点项目“氧化铁薄膜太阳能水解制氢技术研究”(No.07GGZD139GX-026)
摘    要:使用反应溅射法在FTO导电玻璃基底上制备了附着力强、表面光滑、均匀的WO3光电薄膜,系统地研究了氩气与氧气流量比和溅射功率对该薄膜光电性能的影响。通过XRD、AFM、Mott-Schottky(M-S)分别分析薄膜的物相、形貌、光电性质。光电转化效率(IPCE)测试表明:当氩氧流量比为2和溅射功率250 W时,WO3薄膜的光电性能最好。该薄膜在400 nm波长处的IPCE值高达40%。

关 键 词:WO3  薄膜  反应溅射  水解制氢  光电转化效率(IPCE)

Effect of Oxygen Ratio and Sputtering Poweron on Photoelectric Performance of WO3 Films
XU Ying,YANG Xin,LIU Shang-jun,JIANG Chun-ping,KANG Hong,GAO Zi-chen,CHEN Jin-wei,WANG Rui-lin. Effect of Oxygen Ratio and Sputtering Poweron on Photoelectric Performance of WO3 Films[J]. GuangZhou Chemical Industry and Technology, 2012, 0(5): 88-91
Authors:XU Ying  YANG Xin  LIU Shang-jun  JIANG Chun-ping  KANG Hong  GAO Zi-chen  CHEN Jin-wei  WANG Rui-lin
Affiliation:(College of Materials Science and Engineering,Sichuan University,Sichuan Chengdu 610065,China)
Abstract:WO3 films with strong adhesion,good smooth,uniform photoelectric character were prepared on the FTO substrates by reactive sputtering.The effect of Ar:O2 ratio and sputtering power on photoelectric(PEC) performance was studied.The physics phase,morphology and PEC properties of the films was characterized by XRD,AFM,and Mott-Schottky(MS).The incident photo to current efficient(IPCE) test showsed that WO3 film had the best PEC performance when prepared with the flow of Ar:O2=2 and 250 W sputtering power.The IPCE value was as high as 40% at 400 nm wavelength.
Keywords:WO3  films  RF sputtering  water splitting  IPCE
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