| 氢化非晶硅磷掺杂工艺条件的研究 |
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| 引用本文： | 曾云 陈迪平. 氢化非晶硅磷掺杂工艺条件的研究[J]. 微细加工技术, 1994, 0(2): 25-28 |
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| 作者姓名： | 曾云 陈迪平 |
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| 作者单位： | 湖南大学应用物理系 |
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| 摘 要： | 本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。
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| 关 键 词： | 非晶硅；掺杂；工艺条件 |
THE STUDY FOR THE TFCHNOLOGICAL CONDITIONS OF a Si:H WITH P DOPING |
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| Zeng Yun,Chen Diping. THE STUDY FOR THE TFCHNOLOGICAL CONDITIONS OF a Si:H WITH P DOPING[J]. Microfabrication Technology, 1994, 0(2): 25-28 |
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| Authors: | Zeng Yun Chen Diping |
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| Abstract: | In this paper,we have studied the technological conditions of a-Si:Hwith P-doping. We have found the relations between the electrical conduc-tivity and substrate tempecature, gaseous flow, gaseous pressurs, RF powerand growing time that provided the evidence for the efficient doping of a-Si and the study of a-Si device. |
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| Keywords: | amorphous silicon doping technological conditions |
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