Effect of thallium doping on the parameters of localized states in p-GaSe single crystals |
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| Authors: | S. N. Mustafaeva M. M. Asadov A. A. Ismailov |
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| Affiliation: | 1.Institute of Physics,Academy of Sciences of Azerbaijan,Baku,Azerbaijan;2.Institute of Chemical Problems,Academy of Sciences of Azerbaijan,Baku,Azerbaijan |
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| Abstract: | Experimental evidence is presented that, at temperatures from 167 to 250 K, electrical transport in undoped and thallium-doped p-GaSe single crystals is due to variable-range hopping. The main parameters of localized states in the band gap of p-GaSe〈T1〉 (0, 1, 2, and 2.5 mol % Tl) have been estimated as functions of doping level. |
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