| 直流反应磁控溅射法淀积ZrN薄膜 |
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| 引用本文： | 吴大维,张志宏,罗海林,郭怀喜,范湘军.直流反应磁控溅射法淀积ZrN薄膜[J].材料研究学报,1997,11(2):207-208. |
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| 作者姓名： | 吴大维 张志宏 罗海林 郭怀喜 范湘军 |
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| 作者单位： | 武汉大学;武汉大学;武汉大学;武汉大学;武汉大学 |
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| 基金项目： | 国家自然科学基金!59571047 |
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| 摘 要： | 采用直流反应磁控溅射法淀积ＺｒＮ薄膜，发现在晶向硅片上ＺｒＮ薄膜按晶向生长。控制生长工艺可以获得ＺｒＮ晶向的外延生长膜。
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| 关 键 词： | 薄膜 反应磁控溅射 外延生长 氮化锆 |
| 收稿时间： | 1997-04-25 |
| 修稿时间： | 1997-04-25 |
PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING |
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| WU Dawei,ZHANG Zhihong,LUO Hailin,GUO Huaixi,FAN Xiangjun.PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING[J].Chinese Journal of Materials Research,1997,11(2):207-208. |
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| Authors: | WU Dawei ZHANG Zhihong LUO Hailin GUO Huaixi FAN Xiangjun |
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| Affiliation: | WU Dawei,ZHANG Zhihong,LUO Hailin,GUO Huaixi,FAN Xiangjun (Correspondent: WU Dawei,Department of Physics,Wuhan University,Wuhan ) |
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| Abstract: | ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditi |
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| Keywords: | Zirconium nitride film DC reactive magnetron sputtering epitaxial growth film resistance material |
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